Systematic gate-controlled reentrant conductance of a superconductor-semiconductor two-dimensional electron gas junction
Etsuko Toyoda, Hideaki Takayanagi, Hayato Nakano
DOI 10.1103/PhysRevB.59.R11653 · Physical Review B
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Abstract
We have investigated the temperature and voltage dependencies of the conductance in a superconductor-semiconductor two-dimensional electron gas (2DEG) junction with a gate. We observed the systematically controlled reentrant behavior of the conductance by using the gate to change diffusion constant of the 2DEG. We confirmed that the correlation energy of the proximity correction to the conductance is proportional to the diffusion constant of the normal part. We also examined the effect of the magnetic field on the reentrance and found that even a small magnetic field changed it drastically.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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