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Impact of Pr doping on superconductivity in Bi2PrxCa3−xCu2O8+δ

K. Yoshida, H. Sasakura, S. Tsukui, R. Oshima, T. Santoh, Y. Mizokawa

DOI 10.1103/PhysRevB.61.11332 · Physical Review B

T1

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Abstract

A systematic study on the nature of Pr doping in Bi2PrxCa3−xCu2O8+δ(0.2<~x<~0.6) has been made on films grown by laser ablation. These films are a metastable Bi-2212 phase which has not yet been grown in this doping range by other methods. The film with x=0.2 shows the highest zero-resistance temperature (Tcz) of about 65 K. Tcz of the films decreases with increasing Pr content yielding a metal-to-insulator transition for x>0.5. By analyzing x-ray photoelectron spectra we show that Pr is trivalent. From this we are able to demonstrate that the variation of Tcz with doping is predominantly due to hole filling induced by the trivalent Pr.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Bi2PrxCa3-xCu2O8+δ

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65Pressure not reportedzero_resistance
Bi2PrxCa3-xCu2O8+δ

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

57Pressure not reportedzero_resistance
Bi2PrxCa3-xCu2O8+δ

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

20Pressure not reportedzero_resistance
Bi2PrxCa3-xCu2O8+δ

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

15Pressure not reportedzero_resistance
Bi2Pr0.5Ca2.5Cu2O8

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45Pressure not reportedzero_resistance
PrBa2Cu3O7

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105Pressure not reportedunknown

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