Carrier-relaxation dynamics in intragap states: The case of the superconductor YBa2Cu3O7−δ and the charge-density-wave semiconductor K0.3MoO3

V. V. Kabanov; J. Demsar; D. Mihailovic

doi:10.1103/PhysRevB.61.1477

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Carrier-relaxation dynamics in intragap states: The case of the superconductor YBa2Cu3O7−δ and the charge-density-wave semiconductor K0.3MoO3

V. V. Kabanov, J. Demsar, D. Mihailovic

DOI 10.1103/PhysRevB.61.1477 · Physical Review B

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Abstract

The unusual slow carrier relaxation dynamics—observed in femtosecond pump-probe experiments on high-temperature superconductors and recently also in a charge-density-wave system—is analyzed in terms of a model for relaxation of carriers in intragap states. The data on YBa2Cu3O7−δ near optimum doping and K0.3MoO3 are found to be described very well with the model using a BCS-like gap which closes at Tc. From the analysis of the data we conclude that a significant intragap density of localized states exists in these materials, which can be clearly distinguished from quasiparticle states by the time-resolved optical experiments because of the different time and temperature dependences of the photoinduced transmission or reflection. Localized charges are suggested to be the most likely origin of the intragap states, while the similarity of the response in the two materials appear to exclude spin and vortex excitations.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
YBa2Cu3O6.9 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	90	Pressure not reported	unknown
YBa2Cu3O7 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	90	Pressure not reported	unknown