Quasiparticle diffusion in tantalum using superconducting tunnel junctions
Th. Nussbaumer, Ph. Lerch, E. Kirk, A. Zehnder, R. Füchslin, P. F. Meier, H. R. Ott
DOI 10.1103/PhysRevB.61.9719 · Physical Review B
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Abstract
A specially designed device based on superconducting tunnel junctions was used to measure the diffusion of excess electronic quasiparticles generated in a superconducting film of tantalum by the absorption of x-ray photons. The device was made out of a thin film of epitaxial tantalum. At both ends, a microfabricated Al−AlOx−Al−Nb tunneling junction was placed onto the film. Both tunneling junctions were operated in a current-biased mode in a small magnetic field and were used to monitor the diffusion of excess quasiparticles generated in the Ta. For the data analysis, the Ta absorber has been modeled as a chain of cells, and the time evolution and diffusion of the distribution of energy carried by quasiparticles has been calculated using the Chang-Scalapino equations. In this way, we determined the values of the quasiparticle diffusion length Λ=Dabsτeff, the diffusion rate Dabs, and the effective lifetime τeff.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Ta Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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