Andreev reflection effect on spin-polarized transport in ferromagnet/superconductor/ferromagnet double tunnel junctions

Zhiming Zheng; D. Y. Xing; Guoya Sun; Jinming Dong

doi:10.1103/PhysRevB.62.14326

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Andreev reflection effect on spin-polarized transport in ferromagnet/superconductor/ferromagnet double tunnel junctions

Zhiming Zheng, D. Y. Xing, Guoya Sun, Jinming Dong

DOI 10.1103/PhysRevB.62.14326 · Physical Review B

T1

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Abstract

We take the Andreev reflection into account and apply a quantum-mechanical approach to studying spin-polarized transport in a ferromagnet/superconductor/ferromagnet double tunnel junction and its effect on superconductivity in the superconductor. It is found that in the presence of the Andreev reflection the tunneling magnetoresistance in the double tunnel junction depends strongly on barrier strength. In the antiferromagnetic alignment of the magnetizations, an increase in bias voltage will give rise to a first-order transition from the superconducting state to a normal one.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
La3Ni2O7 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure not reported	unknown