Current noise in long diffusive SNS junctions in the incoherent multiple Andreev reflections regime
E. V. Bezuglyi, E. N. Bratus’, V. S. Shumeiko, G. Wendin
DOI 10.1103/PhysRevB.63.100501 · Physical Review B
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Abstract
Spectral density of current fluctuations at zero frequency is calculated for a long diffusive SNS junction with low-resistive interfaces. At low temperature, T≪Δ, the subgap shot noise approaches linear voltage dependence, S=(2/3R)(eV+2Δ), which is the sum of the shot noise of the normal conductor and voltage independent excess noise. This result can also be interpreted as the 1/3-suppressed Poisson noise for the effective charge q=e(1+2Δ/eV) transferred by incoherent multiple Andreev reflections (MAR). At higher temperatures, anomalies of the current noise develop at the gap subharmonics, eV=2Δ/n. The crossover to the hot electron regime from the MAR regime is analyzed in the limit of small applied voltages.
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