Electronic structure and superconducting gap of silicon clathrate Ba8Si46 studied with ultrahigh-resolution photoemission spectroscopy
T. Yokoya, A. Fukushima, T. Kiss, K. Kobayashi, S. Shin, K. Moriguchi, A. Shintani, H. Fukuoka, S. Yamanaka
DOI 10.1103/PhysRevB.64.172504 · Physical Review B
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Abstract
We study the electronic structure and superconducting transition of silicon clathrate Ba8Si46(Tc=8K) using photoemission spectroscopy. We observe a narrow band at the Fermi level (EF), whose width (∼0.3 eV) is substantially smaller than that of band structure calculations (∼1.5 eV). Ultrahigh-resolution measurements show a superconducting gap at 5.4 K [2Δ(0)/kBTc=3.51]. Fine structures associated with phonons are observed within 70 meV of EF. These results characterize Ba8Si46 as a weak-coupling superconductor most probably driven by phonon.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Ba8Si46 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 8 | Pressure not reported | unknown |
| Na2Ba6Si46 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 4 | Pressure not reported | unknown |
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