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Double reentrant superconductor-insulator transition in thin TiN films

N. Hadacek, M. Sanquer, J.-C. Villégier

DOI 10.1103/PhysRevB.69.024505 · Physical Review B

T1

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Abstract

We studied the superconductor-insulator transition in very thin films of TiN (and NbN) at very low temperature (T=35mK) as a function of sheet resistance and magnetic field. The critical temperature dependence versus sheet resistance follows the Finkel’stein theory for homogeneous films. A TiN sample very close to the critical point exhibits a double reentrant behavior below T=150mK as the magnetic field increases. At large magnetic field and very low temperature a negative magnetoresistance is observed.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
TiN

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4.7Pressure not reportedunknown
NbN

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16Pressure not reportedunknown

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