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Electron correlations and bond-length fluctuations in copper oxide superconductors: Electron versus hole doping

L. Hozoi, S. Nishimoto

DOI 10.1103/PhysRevB.73.245101 · Physical Review B

T1

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Abstract

We investigate the nature of the electronic ground state and electron-lattice couplings for doped chains of CuO4 plaquettes or CuO6 octahedra. The undoped configuration implies here Cu 3d9 and O 2p6 formal valence states. The results of multiconfiguration calculations on 4-plaquette (or 4-octahedra) linear clusters indicate strong electron-lattice interactions and polaronic behavior of the doped particles, for both electron and hole doping. For certain phases of the oxygen-ion half-breathing distortions a multiwell energy landscape is predicted. Since each well is associated to carriers localized at different sites, the half-breathing displacements induce charge transfer along the chain. In the case of hole doping, the trends found by ab initio multiconfiguration calculations on 4-octahedra clusters are confirmed by density-matrix renormalization-group calculations for a p−d, extended Hubbard model with chains of few tens of CuO4 plaquettes. Under the assumption of charge separation and the formation of 1∕3-doped stripes, our results seem to support the traveling charge-density wave scenario proposed in some recent contributions for superconductivity in copper oxides.

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FormulaReported Tc (K)Pressure (GPa)Type
Sr1-yNdyCuO2

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—Pressure not reportedunknown

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