Electron correlations and bond-length fluctuations in copper oxide superconductors: Electron versus hole doping
L. Hozoi, S. Nishimoto
DOI 10.1103/PhysRevB.73.245101 · Physical Review B
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Abstract
We investigate the nature of the electronic ground state and electron-lattice couplings for doped chains of CuO4 plaquettes or CuO6 octahedra. The undoped configuration implies here Cu 3d9 and O 2p6 formal valence states. The results of multiconfiguration calculations on 4-plaquette (or 4-octahedra) linear clusters indicate strong electron-lattice interactions and polaronic behavior of the doped particles, for both electron and hole doping. For certain phases of the oxygen-ion half-breathing distortions a multiwell energy landscape is predicted. Since each well is associated to carriers localized at different sites, the half-breathing displacements induce charge transfer along the chain. In the case of hole doping, the trends found by ab initio multiconfiguration calculations on 4-octahedra clusters are confirmed by density-matrix renormalization-group calculations for a p−d, extended Hubbard model with chains of few tens of CuO4 plaquettes. Under the assumption of charge separation and the formation of 1∕3-doped stripes, our results seem to support the traveling charge-density wave scenario proposed in some recent contributions for superconductivity in copper oxides.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Sr1-yNdyCuO2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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