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Pseudogap in electron-doped superconducting Sm2−xCexCuO4−δ by interlayer magnetotransport

Tsuyoshi Kawakami, Takasada Shibauchi, Yuhki Terao, Minoru Suzuki

DOI 10.1103/PhysRevB.74.144520 · Physical Review B

T1

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Abstract

c-axis interlayer magnetoresistivity is measured for an electron-doped (n-type) superconducting cuprate Sm2−xCexCuO4−δ with x=0.14–0.16 using 30nm thick small mesa structures. A systematic doping dependence is observed in the negative interlayer magnetoresistance (MR) component, from which the pseudogap onset temperature T* is determined as the negative MR appearance temperature. For a doping level close to the phase boundary between superconductivity and antiferromagnetism, a T* of 48K is observed. It is also found that T* decreases systematically with increasing x but is still higher than Tc. For all the doping levels, the result represents features characteristic of hole-doped (p-type) cuprates in the overdoped region, suggesting that the phase diagrams for the pseudogap are primarily similar for both the n- and p-type cuprates.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Sm2-xCexCuO4-δ

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

—Pressure unresolvedonset
Nd1.85Ce0.15CuO4

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

—Pressure not reportedunknown
Bi2Sr2CaCu2O8+δ

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

—Pressure not reportedunknown

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