Doping of Ce in T−La2CuO4: Rigorous test for electron-hole symmetry for high-Tc superconductivity
A. Tsukada, H. Yamamoto, M. Naito
DOI 10.1103/PhysRevB.74.174515 · Physical Review B
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Abstract
We report that Ce doping was achieved in La2CuO4 with the K2NiF4(T) structure for the first time by molecular beam epitaxy. A synthesis temperature of as low as ∼ 630°C and an appropriate substrate choice, i.e., (001)LaSrGaO4(as=3.843Å), enabled us to incorporate Ce into the K2NiF4 lattice and to obtain Ce-doped T−La2−xCexCuO4 up to x∼0.06. The doping of Ce makes T−La2CuO4 more insulating, which is in sharp contrast to Sr (or Ba) doping in T−La2CuO4, which makes the compound metallic and superconducting. The observed smooth increase in resistivity from the hole-doped side (T−La2−xSrxCuO4) to the electron-doped side (T−La2−xCexCuO4) indicates that the electron-hole symmetry is broken in the T-phase materials.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| La2-xCexCuO4+δ Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure unresolved | unknown |
| La2-xSrxCuO4 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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