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Fermi surface and superconductivity in noncentrosymmetric CeRhSi3

T. Terashima, Y. Takahide, T. Matsumoto, S. Uji, N. Kimura, H. Aoki, H. Harima

DOI 10.1103/PhysRevB.76.054506 · Physical Review B

T1

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Abstract

We report measurements of the ac magnetic susceptibility and de Haas–van Alphen effect (dHvA) in CeRhSi3 up to a pressure P=29.5kbar with the field in the c direction. The observed Fermi surface suggests that Ce4f electrons are itinerant even when antiferromagnetic order occurs. Effective masses decrease with P: no enhancement is observed as the antiferromagnetic transition temperature is reduced by the application of pressure. Analyses of dHvA oscillations in the mixed state indicate that the influence of the superconducting energy gap is negligible for some orbits.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
CeRhSi3

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1.12.6 GPaonset
CeRhSi3

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0.462.95 GPaonset
CePt3Si

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—Pressure not reportedunknown

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