Andreev reflection and strongly enhanced magnetoresistance oscillations in GaxIn1−xAs∕InP heterostructures with superconducting contacts

Igor E. Batov; Thomas Schäpers; Nikolai M. Chtchelkatchev; Hilde Hardtdegen; Alexey V. Ustinov

doi:10.1103/PhysRevB.76.115313

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Andreev reflection and strongly enhanced magnetoresistance oscillations in GaxIn1−xAs∕InP heterostructures with superconducting contacts

Igor E. Batov, Thomas Schäpers, Nikolai M. Chtchelkatchev, Hilde Hardtdegen, Alexey V. Ustinov

DOI 10.1103/PhysRevB.76.115313 · Physical Review B

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Abstract

We study the magnetotransport in small hybrid junctions formed by high-mobility GaxIn1−xAs∕InP heterostructures coupled to superconducting (S) and normal metal (N) terminals. Highly transmissive superconducting contacts to a two-dimensional electron gas (2DEG) located in a GaxIn1−xAs∕InP heterostructure are realized by using a Au∕NbN layer system. The magnetoresistance of the S/2DEG/N structures is studied as a function of dc bias current and temperature. At bias currents below a critical value, the resistance of the S/2DEG/N structures develops a strong oscillatory dependence on the magnetic field, with an amplitude of the oscillations considerably larger than that of the reference N/2DEG/N structures. The experimental results are qualitatively explained by taking into account Andreev reflection in high magnetic fields.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
NbN Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure not reported	unknown