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Direct observation of intrinsic Josephson junction characteristics in electron-doped Sm2−xCexCuO4−δ

Tsuyoshi Kawakami, Minoru Suzuki

DOI 10.1103/PhysRevB.76.134503 · Physical Review B

T1

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Abstract

We have investigated the current-voltage (CV) characteristics of the intrinsic Josephson junctions (IJJs) in the electron-doped high-Tc superconductor Sm2−xCexCuO4−δ by using a small mesa structure fabricated on a single crystal surface. It is found that multiple resistive branches, i.e., typical IJJ characteristics, are observed in the CV characteristics when the junction area of a mesa is 10μm2 or less. It is also found that a typical Josephson critical current density Jc is 7.5kA∕cm2 at 4.2K for Tc=20.7K. The Josephson penetration depth is experimentally estimated to be 1.0–1.6μm from the size dependence of Jc. Both Jc and Tc are found to decrease with the carrier doping level, as is found for hole-doped Bi2Sr2CaCu2O8+δ in the heavily overdoped region. These results are discussed in relation to the current locking in terms of the coupled Josephson junction stack model.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Sm2-xCexCuO4-δ

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20.7Pressure not reportedmidpoint
Bi2Sr2CaCu2O8+δ

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—Pressure not reportedunknown
Tl2Ba2Ca2Cu3O10

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—Pressure not reportedunknown
Hg2Ba2Ca2Cu3O10

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—Pressure not reportedunknown
YBa2Cu3O7-x

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—Pressure not reportedunknown
RuSr2GdCu2O8

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—Pressure not reportedunknown
La2-xSrxCuO4

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—Pressure not reportedunknown
Pr2-xCexCuO4+δ

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

—Pressure not reportedunknown

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