Theory of tunneling conductance of graphene normal metal-insulator-superconductor junctions
Subhro Bhattacharjee, Moitri Maiti, K. Sengupta
DOI 10.1103/PhysRevB.76.184514 · Physical Review B
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Abstract
We calculate the tunneling conductance of a graphene normal metal-insulator-superconductor (NIS) junction with a barrier of thickness d and with an arbitrary voltage V0 applied across the barrier region. We demonstrate that the tunneling conductance of such a NIS junction is an oscillatory function of both d and V0. We also show that the periodicity and amplitude of such oscillations deviate from their universal values in the thin barrier limit as obtained in an earlier work [S. Bhattacharjee and K. Sengupta, Phys. Rev. Lett. 97, 217001 (2006)] and become a function of the applied voltage V0. Our results reproduce the earlier results on tunneling conductance of such junctions in the thin [S. Bhattacharjee and K. Sengupta, Phys. Rev. Lett. 97, 217001 (2006)] and zero [C. W. J. Beenakker, Phys. Rev. Lett. 97, 067007 (2006)] barrier limits as special limiting cases. We discuss the experimental relevance of our results.
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