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Approach to a superconductor-to-Bose-insulator transition in disordered films

Myles A. Steiner, Nicholas P. Breznay, Aharon Kapitulnik

DOI 10.1103/PhysRevB.77.212501 · Physical Review B

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Abstract

Through a detailed study of scaling near the magnetic field-tuned superconductor-to-insulator transition in strongly disordered films, we find that results for a variety of materials can be collapsed onto a single phase diagram. The data display two clear branches, one with weak disorder and an intervening metallic phase, the other with strong disorder. Along the strongly disordered branch, the resistance at the critical point approaches RQ=h/4e2 and the scaling of the resistance is consistent with quantum percolation and, therefore, with the predictions of the dirty boson model.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
InOx

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—Pressure not reportedunknown
MoGe

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—Pressure not reportedunknown
Ta

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—Pressure not reportedunknown
TiN

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—Pressure not reportedunknown

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