Origin of superconductivity in boron-doped silicon carbide from first principles
Jesse Noffsinger, Feliciano Giustino, Steven G. Louie, Marvin L. Cohen
DOI 10.1103/PhysRevB.79.104511 · Physical Review B
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Abstract
We investigate the origin of superconductivity in boron-doped silicon carbide using a first-principles approach. The strength of the electron-phonon coupling calculated for cubic SiC at the experimental doping level suggests that the superconductivity observed in this material is phonon mediated. Analysis of the 2H-SiC, 4H-SiC, 6H-SiC, and 3C-SiC polytypes indicates that superconductivity depends on the stacking of the Si and C layers and that the cubic polytype will exhibit the highest transition temperature. In contrast to the cases of silicon and diamond, acoustic phonons are found to play a major role in the superconductivity of silicon carbide.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| SiC Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 1.4 | Pressure not reported | unknown |
| SiC Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 1.1 | Pressure not reported | unknown |
| SiC Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 6.3 | Pressure not reported | unknown |
| Si Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 0.3 | Pressure not reported | unknown |
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