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Effects of chemical pressure on the Fermi surface and band dispersion of the electron-doped high-Tc superconductors

M. Ikeda, T. Yoshida, A. Fujimori, M. Kubota, K. Ono, Hena Das, T. Saha-Dasgupta, K. Unozawa, Y. Kaga, T. Sasagawa, H. Takagi

DOI 10.1103/PhysRevB.80.014510 · Physical Review B

T1

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Abstract

We have performed angle-resolved photoemission spectroscopy measurements and first-principles electronic-structure calculations on the electron-doped high-Tc superconductors (HTSCs) Ln1.85Ce0.15CuO4 (Ln=Nd, Sm, and Eu). The observed Fermi surface and band dispersion show such changes that with decreasing ionic size of Ln3+ (increasing chemical pressure), the curvature of the Fermi surface or −t′/t decreases, where t and t′ are transfer integrals between the nearest-neighbor and next-nearest-neighbor Cu sites, respectively, explaining the apparently inconsistent behavior seen in the hole-doped HTSC La2−xSrxCuO4 under epitaxial strain. Around the node, the antiferromagnetic gap is opened with increasing chemical pressure. We propose that the nodal gap opening is possibly due to the decrease in −t′/t through the improved nesting, leading to the decrease in Tc.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Nd1.85Ce0.15CuO4

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22Pressure not reportedunknown
Sm1.85Ce0.15CuO4

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16Pressure not reportedunknown
Eu1.85Ce0.15CuO4

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0Pressure not reportedunknown
HgBa2Ca2Cu3O4

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135Pressure unresolvedunknown
HgBa2Ca2Cu3O4

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164Pressure not reportedunknown

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