Exchange bias in a ferromagnetic semiconductor induced by a ferromagnetic metal: Fe/(Ga,Mn)As bilayer films studied by XMCD measurements and SQUID magnetometry

K. Olejnik; P. Wadley; J. A. Haigh; K. W. Edmonds; R. P. Campion; A. W. Rushforth; B. L. Gallagher; C. T. Foxon; T. Jungwirth; J. Wunderlich; S. S. Dhesi; S. A. Cavill; G. van der Laan; E. Arenholz

doi:10.1103/PhysRevB.81.104402

Exchange bias in a ferromagnetic semiconductor induced by a ferromagnetic metal: Fe/(Ga,Mn)As bilayer films studied by XMCD measurements and SQUID magnetometry

K. Olejnik, P. Wadley, J. A. Haigh, K. W. Edmonds, R. P. Campion, A. W. Rushforth, B. L. Gallagher, C. T. Foxon, T. Jungwirth, J. Wunderlich, S. S. Dhesi, S. A. Cavill, G. van der Laan, E. Arenholz

DOI 10.1103/PhysRevB.81.104402 · Physical Review B

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Abstract

We demonstrate an exchange bias in (Ga,Mn)As induced by antiferromagnetic coupling to a thin overlayer of Fe. Bias fields of up to 240 Oe are observed. Using element-specific x-ray magnetic circular dichroism measurements, we distinguish a strongly exchange-coupled (Ga,Mn)As interface layer in addition to the biased bulk of the (Ga,Mn)As film. The interface layer remains polarized at room temperature.