Direct observation of the superconducting gap in a thin film of titanium nitride using terahertz spectroscopy
Uwe S. Pracht, Marc Scheffler, Martin Dressel, David F. Kalok, Christoph Strunk, Tatyana I. Baturina
DOI 10.1103/PhysRevB.86.184503 · Physical Review B
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Abstract
We report on the charge carrier dynamics of superconducting titanium nitride (TiN) in the frequency range 90–510 GHz (3–17 cm−1). The experiments were performed on an 18-nm thick TiN film with a critical temperature of Tc=3.4 K. Measurements were carried out from room temperature down to 2 K, and in magnetic fields up to B=7 T. We extract the real and imaginary parts of the complex conductivity σ̂ as a function of frequency and temperature, directly providing the superconducting energy gap 2Δ. Further analysis yields the superconducting London penetration depth λL. The findings as well as the normal-state properties strongly suggest conventional BCS superconductivity, underlined by the ratio 2Δ(0)/kBTc=3.44. Detailed analysis of the charge carrier dynamics of the silicon substrate is also discussed.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| TiN Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 3.4 | Pressure not reported | zero_resistance |
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