Electronically driven superconductor-insulator transition in electrostatically doped La2CuO4+δ thin films
J. Garcia-Barriocanal, A. Kobrinskii, X. Leng, J. Kinney, B. Yang, S. Snyder, A. M. Goldman
DOI 10.1103/PhysRevB.87.024509 · Physical Review B
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Abstract
Using an electronic double layer transistor we have systematically studied the superconductor-to-insulator transition in La2CuO4+δ thin films grown by ozone-assisted molecular-beam epitaxy. We have confirmed the high crystalline quality of the cuprate films and have demonstrated the suitability of the electronic double layer technique to continuously vary the charge density in a system that is otherwise characterized by the presence of miscibility gaps. The transport and magnetotransport results highlight the role of electron-electron interactions in the mechanism of the transition due to the proximity of the Mott-insulating state.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| La2CuO4+δ Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 45 | Pressure not reported | onset |
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