Thickness dependence of the superconducting critical temperature in heavily doped Si:B epilayers
A. Grockowiak, T. Klein, H. Cercellier, F. Lévy-Bertrand, X. Blase, J. Kačmarčik, T. Kociniewski, F. Chiodi, D. Débarre, G. Prudon, C. Dubois, C. Marcenat
DOI 10.1103/PhysRevB.88.064508 · Physical Review B
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Abstract
We report on the superconducting properties of a series of heavily doped Si:B epilayers grown by gas immersion laser doping with boron content (nB) ranging from ∼3×1020 cm−3 to ∼6×1021cm−3 and thickness (d) varying between ∼20 nm and ∼210 nm. We show that superconductivity is only observed for nB values exceeding a threshold value (nc,S) which scales as nc,S∝1/d. The critical temperature (Tc) then rapidly increases with nB, largely exceeding the theoretical values which can be estimated by introducing the electron-phonon coupling constant (λe−ph) deduced from ab initio calculations into the McMillan equation. Surprisingly Tc(nB,d) is fully determined by the boron dose (nB×d) and can be well approximated by a simple Tc(nB,d)≈Tc,0[1−A/(nB.d)] law, with Tc,0∼750 mK and A∼8(±1)×1015 cm−2.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Si:B Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 0.75 | Pressure unresolved | onset |
| C:B Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 10 | Pressure not reported | unknown |
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