Superconductivity and bandwidth-controlled Mott metal-insulator transition in 1T-TaS2−xSex
R. Ang, Y. Miyata, E. Ieki, K. Nakayama, T. Sato, Y. Liu, W. J. Lu, Y. P. Sun, T. Takahashi
DOI 10.1103/PhysRevB.88.115145 · Physical Review B
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Abstract
We have performed high-resolution angle-resolved photoemission spectroscopy (ARPES) of layered chalcogenide 1T-TaS2−xSex to elucidate the electronic states especially relevant to the occurrence of superconductivity. We found a direct evidence for a Ta-5d-derived electron pocket associated with the superconductivity, which is fragile against a Mott-gap opening observed in the insulating ground state for S-rich samples. In particular, a strong electron-electron interaction-induced Mott gap driven by a Ta 5d orbital also exists in the metallic ground state for Se-rich samples, while finite ARPES intensity near the Fermi level likely originating from a Se 4p orbital survives, indicative of the orbital-selective nature of the Mott transition. Present results suggest that effective electron correlation and p-d hybridization play a crucial role to tune the superconductivity and Mott metal-insulator transition.
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