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Superconductivity and strong intrinsic defects in LaPd1−xBi2

Fei Han, Christos D. Malliakas, Constantinos C. Stoumpos, Mihai Sturza, Helmut Claus, Duck Young Chung, Mercouri G. Kanatzidis

DOI 10.1103/PhysRevB.88.144511 · Physical Review B

T1

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Abstract

Two new phases LaPd1−xBi2 and CePd1−xBi2 were obtained by growing single crystals in Bi flux. They adopt the tetragonal ZrCuSi2-type structure and feature Bi-square nets and PbO-type PdBi layers with significant partial Pd occupancy. Bulk superconductivity at 2.1 K and metallic behavior above Tc are observed in LaPd1−xBi2. A small residual resistance ratio (RRR) indicates a strong scattering effect induced by the Pd vacancies, which implies an s-wave pairing symmetry in LaPd1−xBi2. The broadening of the resistivity transition was measured under different magnetic fields demonstrating a high upper critical field of 3 T. Hall effect measurements reveal dominantly electron-like charge carriers and single-band transport behavior in LaPd1−xBi2. The paramagnetic CePd1−xBi2 is nonsuperconducting but shows antiferromagnetic ordering below 6 K.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
LaPd0.85Bi2

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2.1Pressure not reportedzero_resistance
LaPd0.85Bi2

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2Pressure not reportedzero_resistance
CeNi1-xBi2

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4.2Pressure not reportedunknown
LaNi1-xBi2

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—Pressure not reportedunknown

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