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Superstructure-dependent electronic states in CaAlSi superconductors studied by angle-resolved photoemission spectroscopy

T. Sato, Y. X. Xiao, S. Souma, K. Nakayama, K. Sugawara, S. Kuroiwa, J. Akimitsu, T. Takahashi

DOI 10.1103/PhysRevB.91.195114 · Physical Review B

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Abstract

We have performed high-resolution angle-resolved photoemission spectroscopy on layered polymorph series of 1H−, 5H−, and 6H−CaAlSi, which exhibit superconductivity below 6.5, 5.7, and 7.7 K, respectively. While the overall band structure in the valence-band region is similar among these compounds, the volume of the Fermi surface at the M point and the magnitude of the superconducting gap are markedly different from each other. Implications of such variation in the electronic structure due to the superstructure along the c axis are discussed in relation to the physical properties of CaAlSi.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
CaAlSi

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6.5Pressure not reportedunknown
CaAlSi

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

5.7Pressure not reportedunknown
CaAlSi

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7.7Pressure not reportedunknown
MgB2

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39.7Pressure not reportedunknown

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