Effect of photon-assisted Andreev reflection in the accuracy of a SINIS turnstile
A. Di Marco, V. F. Maisi, F. W. J. Hekking, J. P. Pekola
DOI 10.1103/PhysRevB.92.094514 · Physical Review B
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Abstract
We consider a hybrid single-electron transistor constituted by a gate-controlled normal-metal island (N) connected to two voltage-biased superconducting leads (S) by means of two tunnel junctions (SINIS), operated as a turnstile. We show that the exchange of photons between this system and the high-temperature electromagnetic environment where it is embedded enhances Andreev reflection, thereby limiting the single-electron tunneling accuracy.
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