Disorder influences the quantum critical transport at a superconductor-to-insulator transition
H. Q. Nguyen, S. M. Hollen, J. M. Valles, Jr., J. Shainline, J. M. Xu
DOI 10.1103/PhysRevB.92.140501 · Physical Review B
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Abstract
We isolated flux disorder effects on the transport at the critical point of the quantum magnetic field tuned superconductor-to-insulator transition (BSIT). The experiments employed films patterned into geometrically disordered hexagonal arrays. Spatial variations in the flux per unit cell, which grow in a perpendicular magnetic field, constitute flux disorder. The growth of flux disorder with magnetic field limited the number of BSITs exhibited by a single film due to flux matching effects. The critical metallic resistance at successive BSITs grew with flux disorder contrary to predictions of its universality. These results open the door for controlled studies of disorder effects on the universality class of an ubiquitous quantum phase transition.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Bi Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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