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Observation of surface states on heavily indium-doped SnTe(111), a superconducting topological crystalline insulator

C. M. Polley, V. Jovic, T.-Y. Su, M. Saghir, D. Newby, Jr., B. J. Kowalski, R. Jakiela, A. Barcz, M. Guziewicz, T. Balasubramanian, G. Balakrishnan, J. Laverock, K. E. Smith

DOI 10.1103/PhysRevB.93.075132 · Physical Review B

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Abstract

The topological crystalline insulator tin telluride is known to host superconductivity when doped with indium (Sn1−xInxTe), and for low indium content (x=0.04) it is known that the topological surface states are preserved. Here we present the growth, characterization, and angle resolved photoemission spectroscopy analysis of samples with much heavier In doping (up to x≈0.4), a regime where the superconducting temperature is increased nearly fourfold. We demonstrate that despite strong p-type doping, Dirac-like surface states persist.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
CuxBi2Se3

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3.8Pressure not reportedunknown
Sn1-xInxTe

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

1.2Pressure not reportedunknown
Sn1-xInxTe

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

4.5Pressure not reportedunknown
Sn1-xInxTe

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—Pressure not reportedunknown

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