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Realization of insulating state and superconductivity in the Rashba semiconductor BiTeCl

Jian-Jun Ying, Viktor V. Struzhkin, Zi-Yu Cao, Alexander F. Goncharov, Ho-Kwang Mao, Fei Chen, Xian-Hui Chen, Alexander G. Gavriliuk, Xiao-Jia Chen

DOI 10.1103/PhysRevB.93.100504 · Physical Review B

T1

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Abstract

Measurements of the resistivity, Hall coefficient, and Raman spectroscopy are performed on a Rashba semiconductor BiTeCl single crystal at high pressures up to 50 GPa. We find that applying pressure first induces a theoretically predicted insulating state, followed by a superconducting phase with an insulating normal state. Upon heavy compression, another different superconducting phase is entered into with a metallic normal state. A domelike evolution of the superconducting transition temperature with pressure is obtained with a crossover from the electron to hole carriers across the boundary of the two superconducting phases. These findings imply the possible realization of a topological state of the insulating and superconducting phases in this material.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
BiTeCl

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—13 GPaonset
BiTeCl

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—24.1 GPaonset
BiTeCl

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—50.8 GPaonset
Bi2Te3

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—Pressure not reportedunknown
Bi2Se3

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—Pressure not reportedunknown
Sb2Te3

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—Pressure not reportedunknown
CuxBi2Se3

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—Pressure not reportedunknown

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