Two-dimensional epitaxial superconductor-semiconductor heterostructures: A platform for topological superconducting networks
J. Shabani, M. Kjaergaard, H. J. Suominen, Younghyun Kim, F. Nichele, K. Pakrouski, T. Stankevic, R. M. Lutchyn, P. Krogstrup, R. Feidenhans'l, S. Kraemer, C. Nayak, M. Troyer, C. M. Marcus, C. J. Palmstrøm
DOI 10.1103/PhysRevB.93.155402 · Physical Review B
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Abstract
A key challenge in fabrication of superconductor (S)-semiconductor (Sm) hybrid devices is forming highly transparent contacts between the active electrons in the semiconductor and the superconducting metal. In this work, we show that a near perfect interface and a highly transparent contact can be achieved using epitaxial growth of aluminum on an InAs two-dimensional electron system. We demonstrate that this material system, Al-InAs, satisfies all the requirements necessary to reach into the topological superconducting regime by individual characterization of the semiconductor two-dimensional electron system, superconductivity of Al, and performance of S-Sm-S junctions. This exciting development might lead to a number of useful applications ranging from spintronics to quantum computing.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 1.58 | Pressure not reported | unknown |
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