Variable-range hopping theory for the gap observed in strongly underdoped cuprate Bi2Sr2−xLaxCuO6+δ
Wei-Qiang Chen, Jun-Qiu Zhang, T. M. Rice, Fu-Chun Zhang
DOI 10.1103/PhysRevB.93.241115 · Physical Review B
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Abstract
Recent angle resolved photoemission spectroscopy experiments on strongly underdoped Bi2Sr2−xLaxCuO6+δ cuprates have reported an unusual gap in the nodal direction. Transport experiments on these cuprates observed variable-range hopping behavior. These cuprates have both electron and hole doping, which has led to proposals that this cuprate is analogous to partially compensated semiconductors. The nodal gap then corresponds to the Efros-Shklovskii (ES) gap in such semiconductors. We calculate the doping and temperature dependence of an ES gap model and find support for an Efros-Shklovskii model.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Bi2Sr2-xLaxCuO6+δ Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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