High Fermi-level spin polarization in the (Bi1−xSbx)2Te3 family of topological insulators: A point contact Andreev reflection study
K. Borisov, C.-Z. Chang, J. S. Moodera, P. Stamenov
DOI 10.1103/PhysRevB.94.094415 · Physical Review B
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Abstract
Point contact Andreev reflection spectroscopy is employed to extract the effective Fermi-level spin polarization of three distinct compositions from the (Bi1−xSbx)2Te3 topological insulator family. The end members, Bi2Te3 and Sb2Te3, exhibit high polarization of 70(4)% and 57(3)%, respectively. High-field (μ0H=14T) point contact spectroscopy shows carrier depletion close to the Fermi level for these two compositions with small activation gaps of 0.40(4) and 0.28(2) meV, respectively. The almost fully suppressed bulk conductivity in the (Bi0.18Sb0.82)2Te3 results in an even higher spin polarization of 83(9)%. Further, it is demonstrated that magnetic doping with Cr and V tends to reduce the spin-polarization values with respect to the ones of the pure compositions. Bi1.97Cr0.03Te3, Sb1.975Cr0.025Te3, Bi1.975V0.025Te3, and Sb1.97V0.03Te3 exhibit spin polarization of 52%, 52%, 58%, and 50%, respectively. In view of the rather high effective polarization, nonmagnetic topological insulators close to (Bi0.18Sb0.82)2Te3 may provide a path towards the characterization of pair-breaking mechanisms in spin-triplet superconductors.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 9.2 | Pressure not reported | onset |
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