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Robust odd-parity superconductivity in the doped topological insulator NbxBi2Se3

M. P. Smylie, K. Willa, H. Claus, A. Snezhko, I. Martin, W.-K. Kwok, Y. Qiu, Y. S. Hor, E. Bokari, P. Niraula, A. Kayani, V. Mishra, U. Welp

DOI 10.1103/PhysRevB.96.115145 · Physical Review B

T1

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Abstract

We present resistivity and magnetization measurements on proton-irradiated crystals demonstrating that the superconducting state in the doped topological insulator NbxBi2Se3 (x=0.25) is surprisingly robust against disorder-induced electron scattering. The superconducting transition temperature Tc decreases without indication of saturation with increasing defect concentration, and the corresponding scattering rates far surpass expectations based on conventional theory. The low-temperature variation of the London penetration depth Δλ(T) follows a power law [Δλ(T)∼T2] indicating the presence of symmetry-protected point nodes. Our results are consistent with the proposed robust nematic Eu pairing state in this material.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
NbxBi2Se3

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3.4Pressure not reportedonset
NbxBi2Se3

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3.4Pressure not reportedonset
Sn1-xInxTe

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—Pressure not reportedunknown
CuxBi2Se3

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—Pressure not reportedunknown
SrxBi2Se3

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—Pressure not reportedunknown
UPt3

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—Pressure not reportedunknown
UBe13

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—Pressure not reportedunknown
Sr2RuO4

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—Pressure not reportedunknown

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