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Pressure-induced topological insulator-to-metal transition and superconductivity in Sn-doped Bi1.1Sb0.9Te2S

Chao An, Xuliang Chen, Bin Wu, Yonghui Zhou, Ying Zhou, Ranran Zhang, Changyong Park, Fengqi Song, Zhaorong Yang

DOI 10.1103/PhysRevB.97.174516 · Physical Review B

T1

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Abstract

Tetradymite-type topological insulator Sn-doped Bi1.1Sb0.9Te2S (Sn-BSTS), with a surface state Dirac point energy well isolated from the bulk valence and conduction bands, is an ideal platform for studying the topological transport phenomena. Here, we present high-pressure transport studies on single-crystal Sn-BSTS, combined with Raman scattering and synchrotron x-ray diffraction measurements. Over the studied pressure range of 0.7–37.2 GPa, three critical pressure points can be observed: (i) At ∼9 GPa, a pressure-induced topological insulator-to-metal transition is revealed due to closure of the bulk band gap, which is accompanied by changes in slope of the Raman frequencies and a minimum in c/a within the pristine rhombohedral structure (R−3m); (ii) at ∼13 GPa, superconductivity is observed to emerge, along with the R−3m to a C2/c (monoclinic) structural transition; (iii) at ∼24 GPa, the superconducting transition onset temperature TC reaches a maximum of ∼12K, accompanied by a second structural transition from the C2/c to a body-centered cubic Im−3m phase.

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FormulaReported Tc (K)Pressure (GPa)Type
Bi1.1Sb0.9Te2S

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412.6 GPaonset
Bi1.1Sb0.9Te2S

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1224 GPaonset

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