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Pressure-induced superconductivity in tin sulfide

Ryo Matsumoto, Peng Song, Shintaro Adachi, Yoshito Saito, Hiroshi Hara, Aichi Yamashita, Kazuki Nakamura, Sayaka Yamamoto, Hiromi Tanaka, Tetsuo Irifune, Hiroyuki Takeya, Yoshihiko Takano

DOI 10.1103/PhysRevB.99.184502 · Physical Review B

T1

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Abstract

Tin sulfide (SnS) single crystals were synthesized using a melt and slow-cooling method. The obtained crystals were characterized by x-ray diffraction, energy-dispersive spectrometry, and by x-ray photoelectron spectroscopy. Electrical transport properties of SnS were investigated under high pressure using a diamond anvil cell with boron-doped metallic diamond electrodes and an undoped diamond insulating layer. We successfully observed an insulator to metal transition between 8.1 and 12.5 GPa and pressure-induced superconductivity with a transition temperature (Tc) of 5.8 K under 47.8 GPa as predicted by theoretical calculations. Comparing with the pressure-induced superconductivity in related SnSe compound, a possible Tc enhancement in SnS by an increase of density of states at the Fermi level is expected.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
SnS

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5.847.8 GPaonset
SnS

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9.7439 GPaunknown
Sn3S4

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21.930 GPaunknown
SnTe

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2Pressure unresolvedunknown

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