Temperature-Dependent Localized Excitations of Doped Carriers in Superconducting Diamond

K. Ishizaka; R. Eguchi; S. Tsuda; A. Chainani; T. Yokoya; T. Kiss; T. Shimojima; T. Togashi; S. Watanabe; C.-T. Chen; Y. Takano; M. Nagao; I. Sakaguchi; T. Takenouchi; H. Kawarada; S. Shin

doi:10.1103/PhysRevLett.100.166402

Temperature-Dependent Localized Excitations of Doped Carriers in Superconducting Diamond

K. Ishizaka, R. Eguchi, S. Tsuda, A. Chainani, T. Yokoya, T. Kiss, T. Shimojima, T. Togashi, S. Watanabe, C.-T. Chen, Y. Takano, M. Nagao, I. Sakaguchi, T. Takenouchi, H. Kawarada, S. Shin

DOI 10.1103/PhysRevLett.100.166402 · Physical Review Letters

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Abstract

Laser-excited photoemission spectroscopy is used to show that the doped carriers in metallic or superconducting diamond couple strongly to the lattice via high-energy (∼150 meV) optical phonons, with direct observations of localized Franck-Condon multiphonon sidebands appearing as Fermi-edge replicas. It exhibits a temperature-dependent spectral weight transfer from higher to lower energy sidebands and zero-phonon Fermi-edge states. The quantified coupling strength shows a systematic increase on lowering temperature, implicating its relation to the normal state transport and superconductivity.