Doping Induced Evolution of Fermi Surface in Low Carrier Superconductor Tl-Doped PbTe
K. Nakayama, T. Sato, T. Takahashi, H. Murakami
DOI 10.1103/PhysRevLett.100.227004 · Physical Review Letters
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Abstract
We have performed high-resolution angle-resolved photoemission spectroscopy on Tl-doped PbTe. We observed a distinct energy shift of the valence band and core levels upon Tl doping, together with the evolution of a small hole pocket around the X¯ point in the Brillouin zone, while no clear evidence for the localized states near the Fermi level is observed. These experimental results suggest that direct hole doping into the valence band and resultant emergence of a small Fermi surface are responsible for the metallic conductivity in Tl-doped PbTe.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Pb1-xTlxTe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 0.35 | Pressure not reported | unknown |
| PbTe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 1.5 | Pressure not reported | unknown |
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