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Field-Induced Carrier Delocalization in the Strain-Induced Mott Insulating State of an Organic Superconductor

Yoshitaka Kawasugi, Hiroshi M. Yamamoto, Naoya Tajima, Takeo Fukunaga, Kazuhito Tsukagoshi, Reizo Kato

DOI 10.1103/PhysRevLett.103.116801 · Physical Review Letters

T1

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Abstract

We report the influence of the field effect on the dc resistance and Hall coefficient in the strain-induced Mott insulating state of an organic superconductor κ−(BEDT−TTF)2Cu[N(CN)2]Br. Conductivity obeys the formula for an activated transport σ□=σ0exp(−W/kBT), where σ0 is a constant and W depends on the gate voltage. The gate-voltage dependence of the Hall coefficient shows that, unlike in conventional field-effect transistors, the effective mobility of dense hole carriers (∼1.6×1014 cm−2) is enhanced by a positive gate voltage. This implies that carrier doping involves delocalization of intrinsic carriers that were initially localized due to electron correlation.

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FormulaReported Tc (K)Pressure (GPa)Type
κ-(BEDT-TTF)2Cu[N(CN)2]Br

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—Pressure not reportedunknown

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