Enhanced Photon Generation in a Nb/n−InGaAs/p−InP Superconductor/Semiconductor-Diode Light Emitting Device

H. Sasakura; S. Kuramitsu; Y. Hayashi; K. Tanaka; T. Akazaki; E. Hanamura; R. Inoue; H. Takayanagi; Y. Asano; C. Hermannstädter; H. Kumano; I. Suemune

doi:10.1103/PhysRevLett.107.157403

Enhanced Photon Generation in a Nb/n−InGaAs/p−InP Superconductor/Semiconductor-Diode Light Emitting Device

H. Sasakura, S. Kuramitsu, Y. Hayashi, K. Tanaka, T. Akazaki, E. Hanamura, R. Inoue, H. Takayanagi, Y. Asano, C. Hermannstädter, H. Kumano, I. Suemune

DOI 10.1103/PhysRevLett.107.157403 · Physical Review Letters

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Abstract

We experimentally demonstrate Cooper pairs’ drastic enhancement of the band-to-band radiative recombination rate in a semiconductor. Electron Cooper pairs injected from a superconducting electrode into an active layer by the proximity effect recombine with holes injected from a p-type electrode. The recombination of a Cooper pair with p-type carriers dramatically increases the photon generation probability of a light-emitting diode in the optical-fiber communication band. The measured radiative decay time rapidly decreases with decreasing temperature below the superconducting transition temperature of the niobium electrodes. Our results indicate the possibility to open up new interdisciplinary fields between superconductivity and optoelectronics.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	7.3	Pressure not reported	onset