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Superconductor-Insulator Transition in Long MoGe Nanowires

Hyunjeong Kim, Shirin Jamali, A. Rogachev

DOI 10.1103/PhysRevLett.109.027002 · Physical Review Letters

T1

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Abstract

The properties of one-dimensional superconducting wires depend on physical processes with different characteristic lengths. To identify the process dominant in the critical regime we have studied the transport properties of very narrow (9–20 nm) MoGe wires fabricated by advanced electron-beam lithography in a wide range of lengths, 1–25 μm. We observed that the wires undergo a superconductor-insulator transition (SIT) that is controlled by cross sectional area of a wire and possibly also by the width-to-thickness ratio. The mean-field critical temperature decreases exponentially with the inverse of the wire cross section. We observed that a qualitatively similar superconductor-insulator transition can be induced by an external magnetic field. Our results are not consistent with any currently known theory of the SIT. Some long superconducting MoGe nanowires can be identified as localized superconductors; namely, in these wires the one-electron localization length is much smaller than the length of a wire.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Mo78Ge22

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3.4Pressure not reportedunknown
Mo78Ge22

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

3.2Pressure not reportedunknown
Mo78Ge22

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

5.5Pressure not reportedunknown
Mo50Ge50

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—Pressure not reportedunknown

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