Superconducting Spin Switch with Infinite Magnetoresistance Induced by an Internal Exchange Field
Bin Li, Niklas Roschewsky, Badih A. Assaf, Marius Eich, Marguerite Epstein-Martin, Don Heiman, Markus Münzenberg, Jagadeesh S. Moodera
DOI 10.1103/PhysRevLett.110.097001 · Physical Review Letters
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Abstract
A theoretical prediction by de Gennes suggests that the resistance in a FI/S/FI (where FI is a ferromagnetic insulator, and S is a superconductor) structure will depend on the magnetization direction of the two FI layers. We report a magnetotransport measurement in a EuS/Al/EuS structure, showing that an infinite magnetoresistance can be produced by tuning the internal exchange field at the FI/S interface. This proximity effect at the interface can be suppressed by an Al2O3 barrier as thin as 0.3 nm, showing the extreme confinement of the interaction to the interface giving rise to the demonstrated phenomena.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 1.55 | Pressure not reported | midpoint |
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