Ballistic Graphene Josephson Junctions from the Short to the Long Junction Regimes
I. V. Borzenets, F. Amet, C. T. Ke, A. W. Draelos, M. T. Wei, A. Seredinski, K. Watanabe, T. Taniguchi, Y. Bomze, M. Yamamoto, S. Tarucha, G. Finkelstein
DOI 10.1103/PhysRevLett.117.237002 · Physical Review Letters
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Abstract
We investigate the critical current IC of ballistic Josephson junctions made of encapsulated graphene–boron-nitride heterostructures. We observe a crossover from the short to the long junction regimes as the length of the device increases. In long ballistic junctions, IC is found to scale as ∝exp(−kBT/δE). The extracted energies δE are independent of the carrier density and proportional to the level spacing of the ballistic cavity. As T→0 the critical current of a long (or short) junction saturates at a level determined by the product of δE (or Δ) and the number of the junction’s transversal modes.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| MoRe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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