Sign-Reversing Hall Effect in Atomically Thin High-Temperature Bi2.1Sr1.9CaCu2.0O8+δ Superconductors
S. Y. Frank Zhao, Nicola Poccia, Margaret G. Panetta, Cyndia Yu, Jedediah W. Johnson, Hyobin Yoo, Ruidan Zhong, G. D. Gu, Kenji Watanabe, Takashi Taniguchi, Svetlana V. Postolova, Valerii M. Vinokur, Philip Kim
DOI 10.1103/PhysRevLett.122.247001 · Physical Review Letters
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Abstract
We developed novel techniques to fabricate atomically thin Bi2.1Sr1.9CaCu2.0O8+δ van der Waals heterostructures down to two unit cells while maintaining a transition temperature Tc close to the bulk, and carry out magnetotransport measurements on these van der Waals devices. We find a double sign change of the Hall resistance Rxy as in the bulk system, spanning both below and above Tc. Further, we observe a drastic enlargement of the region of sign reversal in the temperature-magnetic field phase diagram with decreasing thickness of the device. We obtain quantitative agreement between experimental Rxy(T,B) and the predictions of the vortex dynamics-based description of Hall effect in high-temperature superconductors both above and below Tc.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Bi2.1Sr1.9CaCu2.0O8+δ Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 90 | Pressure not reported | onset |
| Bi2.1Sr1.9CaCu2.0O8+δ Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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