Second-Order Josephson Effect in Excitonic Insulators

Zhiyuan Sun; Tatsuya Kaneko; Denis Golež; Andrew J. Millis

doi:10.1103/PhysRevLett.127.127702

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Second-Order Josephson Effect in Excitonic Insulators

Zhiyuan Sun, Tatsuya Kaneko, Denis Golež, Andrew J. Millis

DOI 10.1103/PhysRevLett.127.127702 · Physical Review Letters

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Abstract

We show that in electron-hole bilayers with excitonic orders arising from conduction and valence bands formed by atomic orbitals that have different parities, nonzero interlayer tunneling leads to a second-order Josephson effect. This means the interlayer electrical current is related to the phase of the excitonic order parameter as J=Jcsin2θ instead of J=Jcsinθ and that the system has two degenerate ground states at θ=0,π that can be switched by an interlayer voltage pulse. When generalized to a three dimensional stack of alternating electron-hole planes or a two dimensional stack of chains, the ac Josephson effect implies that electric field pulses perpendicular to the layers and chains can steer the order parameter phase between the two degenerate ground states, making these devices ultrafast memories. The order parameter steering also applies to the excitonic insulator candidate Ta2NiSe5.