Electron tunneling into superconducting ZrN

J. Geerk; G. Linker; R. Smithey

doi:10.1103/PhysRevLett.57.3284

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Electron tunneling into superconducting ZrN

J. Geerk, G. Linker, R. Smithey

DOI 10.1103/PhysRevLett.57.3284 · Physical Review Letters

T1

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Abstract

We have prepared tunnel junctions on superconducting ZrN thin films using the natural oxide as a tunnel barrier. In the superconducting density of states we observed the phonon-induced structures due to the acoustic and optical phonons. The tunnel data could be analyzed by the McMillan-Rowell procedure without the need to correct for proximity effects. From the resulting Eliashberg function it was concluded that the optical phonons are coupled slightly more strongly to the electrons than the acoustic phonons.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
ZrN Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	9.4	Pressure unresolved	unknown
ZrN Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	9.2	Pressure not reported	onset