Direct lifetime measurements and interactions of charged defect states in submicron Josephson junctions
R. T. Wakai, D. J. Van Harlingen
DOI 10.1103/PhysRevLett.58.1687 · Physical Review Letters
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Abstract
We have measured the emission and capture time of individual electron traps residing within the tunneling barrier of very small-area (<0.05 μm2) Josephson junctions. The voltage-bias dependence of the times is consistent with a simple nonequilibrium model in which the bias enhances the rate for electrons to tunnel into the trap from one side of the barrier and exit out the other. Some junctions show clear evidence of interactions between traps, and for certain bias conditions the noise displays predominantly series kinetics.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| PbInAu Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
| Pb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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