Electronic properties of high-Tc superconductors

C. A. Balseiro; M. Avignon; A. G. Rojo; B. Alascio

doi:10.1103/PhysRevLett.62.2624

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Electronic properties of high-Tc superconductors

C. A. Balseiro, M. Avignon, A. G. Rojo, B. Alascio

DOI 10.1103/PhysRevLett.62.2624 · Physical Review Letters

T1

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Abstract

We study a generalized Hubbard Hamiltonian which includes the Cu and O orbitals in the CuO2 planes of high-Tc superconductors. We use slave-boson technique to account for the intra- and interatomic correlations. In the saddle-point approximation we obtain the metal-insulator phase diagram and conclude that, for one hole per unit cell in the CuO2 plane, La2CuO4 is a charge-transfer insulator. Our results show that doping produces a rapid metallization of the system and destroys antiferromagnetic order. Transport properties and mechanism for superconductivity are briefly discussed.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
La2CuO4 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure not reported	unknown