Evidence for superconductivity in low-temperature–grown GaAs

J. M. Baranowski; Z. Liliental-Weber; W.-F. Yau; E. R. Weber

doi:10.1103/PhysRevLett.66.3079

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Evidence for superconductivity in low-temperature–grown GaAs

J. M. Baranowski, Z. Liliental-Weber, W.-F. Yau, E. R. Weber

DOI 10.1103/PhysRevLett.66.3079 · Physical Review Letters

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Abstract

Magnetic-field-modulated microwave absorption and dc susceptibility measurements have detected evidence for superconductivity in As-rich GaAs layers grown by molecular-beam epitaxy at low temperatures (LT-GaAs). The transition temperature from the normal to the superconducting phase is 10 K. Electron microscopy of these layers found a new, As-rich layered structure in LT-GaAs that is most likely the origin of the superconductivity.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
GaAs Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	10	Pressure not reported	onset
GaAs Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	10	Pressure not reported	onset
As Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	2.7	24 GPa	unknown