Electron tunneling determination of the order-parameter amplitude at the superconductor-insulator transition in 2D

J. M. Valles, Jr.; R. C. Dynes; J. P. Garno

doi:10.1103/PhysRevLett.69.3567

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Electron tunneling determination of the order-parameter amplitude at the superconductor-insulator transition in 2D

J. M. Valles, Jr., R. C. Dynes, J. P. Garno

DOI 10.1103/PhysRevLett.69.3567 · Physical Review Letters

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Abstract

We have investigated the behavior of the superconducting energy gap Δ in ultrathin films of quench condensed Bi near the superconductor-insulator (SI) transition. From electron tunneling measurements on these films, we conclude that Δ becomes very small and approaches zero at the SI transition. We studied high-sheet-resistance films with Tc0’s as low as 0.19 K. This is a factor of 40 lower than the low-sheet-resistance film Tc0 of 6.4 K.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
Bi Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	0.19	Pressure not reported	midpoint
Bi Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	0.7	Pressure not reported	midpoint
Bi Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	6.4	Pressure not reported	unknown