Excess conductance of superconductor-semiconductor interfaces due to phase conjugation between electrons and holes

B. J. van Wees; P. de Vries; P. Magnée; T. M. Klapwijk

doi:10.1103/PhysRevLett.69.510

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Excess conductance of superconductor-semiconductor interfaces due to phase conjugation between electrons and holes

B. J. van Wees, P. de Vries, P. Magnée, T. M. Klapwijk

DOI 10.1103/PhysRevLett.69.510 · Physical Review Letters

T1

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Abstract

A semiclassical description is given of charge transport through a superconductor-semiconductor interface. As a result of the presence of a potential barrier both Andreev and normal reflection occur. Elastic scatterers in the semiconductor generate multiple reflections at the interface. The constructive quantum interference which results from the phase conjugation between electrons and holes enhances the (differential) conductance above its classical value. This excess conductance is suppressed by a magnetic field, or by a finite energy. The latter can be due to a finite voltage bias or a finite temperature.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure not reported	unknown